Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires

Wei Zhang; Fangfang Yang; Maria E. Messing; Kilian Mergenthaler; Mats Erik Pistol; Knut Deppert; Lars Samuelson; Martin H. Magnusson; Arkady Yartsev

doi:10.1088/0957-4484/27/45/455704

Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires

Wei Zhang, Fangfang Yang, Maria E. Messing, Kilian Mergenthaler, Mats Erik Pistol, Knut Deppert, Lars Samuelson, Martin H. Magnusson, Arkady Yartsev

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.

Original language	English
Article number	455704
Journal	Nanotechnology
Volume	27
Issue number	45
DOIs	https://doi.org/10.1088/0957-4484/27/45/455704
Publication status	Published - 2016 Oct 7

Subject classification (UKÄ)

Nano Technology
Condensed Matter Physics

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10.1088/0957-4484/27/45/455704

Cite this

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title = "Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires",

abstract = "In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.",

author = "Wei Zhang and Fangfang Yang and Messing, {Maria E.} and Kilian Mergenthaler and Pistol, {Mats Erik} and Knut Deppert and Lars Samuelson and Magnusson, {Martin H.} and Arkady Yartsev",

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T1 - Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires

AU - Zhang, Wei

AU - Yang, Fangfang

AU - Messing, Maria E.

AU - Mergenthaler, Kilian

AU - Pistol, Mats Erik

AU - Deppert, Knut

AU - Samuelson, Lars

AU - Magnusson, Martin H.

AU - Yartsev, Arkady

PY - 2016/10/7

Y1 - 2016/10/7

N2 - In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.

AB - In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.

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JO - Nanotechnology

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ER -

Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires

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