Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

Rainer Timm; Fian Alexander; Martin Hjort; Claes Thelander; Erik Lind; Jesper N Andersen; Lars-Erik Wernersson; Anders Mikkelsen

doi:10.1063/1.3495776

Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

Rainer Timm, Fian Alexander, Martin Hjort, Claes Thelander, Erik Lind, Jesper N Andersen, Lars-Erik Wernersson, Anders Mikkelsen

Research output: Contribution to journal › Letter › peer-review

Original language	English
Article number	132904
Journal	Applied Physics Letters
Volume	97
DOIs	https://doi.org/10.1063/1.3495776
Publication status	Published - 2010

Subject classification (UKÄ)

Atom and Molecular Physics and Optics

Access to Document

10.1063/1.3495776

Cite this

@article{40e24a4ac2dd4109aa62836a9d4dd3c6,

title = "Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2",

author = "Rainer Timm and Fian Alexander and Martin Hjort and Claes Thelander and Erik Lind and Andersen, {Jesper N} and Lars-Erik Wernersson and Anders Mikkelsen",

year = "2010",

doi = "10.1063/1.3495776",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

AU - Timm, Rainer

AU - Alexander, Fian

AU - Hjort, Martin

AU - Thelander, Claes

AU - Lind, Erik

AU - Andersen, Jesper N

AU - Wernersson, Lars-Erik

AU - Mikkelsen, Anders

PY - 2010

Y1 - 2010

U2 - 10.1063/1.3495776

DO - 10.1063/1.3495776

M3 - Letter

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 132904

ER -