Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Jiongjiong Mo; Erik Lind; Guntrade Roll; Lars-Erik Wernersson

doi:10.1063/1.4891569

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Jiongjiong Mo, Erik Lind, Guntrade Roll, Lars-Erik Wernersson

Research output: Contribution to journal › Article › peer-review

Abstract

Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.

Original language	English
Article number	033516
Journal	Applied Physics Letters
Volume	105
Issue number	3
DOIs	https://doi.org/10.1063/1.4891569
Publication status	Published - 2014

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

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10.1063/1.4891569

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title = "Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors",

abstract = "Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.",

author = "Jiongjiong Mo and Erik Lind and Guntrade Roll and Lars-Erik Wernersson",

year = "2014",

doi = "10.1063/1.4891569",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "3",

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T1 - Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

AU - Mo, Jiongjiong

AU - Lind, Erik

AU - Roll, Guntrade

AU - Wernersson, Lars-Erik

PY - 2014

Y1 - 2014

N2 - Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.

AB - Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.

U2 - 10.1063/1.4891569

DO - 10.1063/1.4891569

M3 - Article

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033516

ER -

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Abstract

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