Remnant magnetoresistance effect at the intersection of two ferromagnetic (Ga,Mn)As nanowires

Tomasz Andrearczyk, Tadeusz Wosinski, Tadeusz Figielski, Andrzej Makosa, Iwona Krogulec, Jerzy Wrobel, Janusz Sadowski

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3 Citations (SciVal)


Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low-field magnetoresistance (MR) of the nanowires exhibits hysteresis-like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of spin misalignment in the wall, has been determined to be of the order of 1 Omega mu m(2). High-field MR has, in turn, allowed determining the lithography-induced anisotropy field for the nanowires of different crystallographic orientations. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Original languageEnglish
Pages (from-to)1587-1591
JournalPhysica Status Solidi. B: Basic Research
Issue number7
Publication statusPublished - 2011

Subject classification (UKÄ)

  • Natural Sciences
  • Physical Sciences


  • domain walls
  • ferromagnetic semiconductors
  • GaMnAs
  • magnetoresistance
  • nanostructures


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