Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN

L Colakerol, PA Glans, L Plucinski, Y Zhang, KE Smith, Alexei Zakharov, Ralf Nyholm, J Cabalu, TD Moustakas

Research output: Contribution to journalArticlepeer-review

1 Citation (SciVal)

Abstract

Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)25-28
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume152
Issue number1-2
DOIs
Publication statusPublished - 2006

Subject classification (UKÄ)

  • Natural Sciences
  • Physical Sciences

Keywords

  • surfaces
  • photoemission
  • semiconductors
  • electronic structure

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