Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN

L Colakerol; PA Glans; L Plucinski; Y Zhang; KE Smith; Alexei Zakharov; Ralf Nyholm; J Cabalu; TD Moustakas

doi:10.1016/j.elspec.2006.03.001

Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN

L Colakerol, PA Glans, L Plucinski, Y Zhang, KE Smith, Alexei Zakharov, Ralf Nyholm, J Cabalu, TD Moustakas

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	25-28
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	152
Issue number	1-2
DOIs	https://doi.org/10.1016/j.elspec.2006.03.001
Publication status	Published - 2006

Subject classification (UKÄ)

Natural Sciences
Physical Sciences

Free keywords

surfaces
photoemission
semiconductors
electronic structure

Access to Document

10.1016/j.elspec.2006.03.001

Cite this

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title = "Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN",

abstract = "Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.",

keywords = "surfaces, photoemission, semiconductors, electronic structure",

author = "L Colakerol and PA Glans and L Plucinski and Y Zhang and KE Smith and Alexei Zakharov and Ralf Nyholm and J Cabalu and TD Moustakas",

year = "2006",

doi = "10.1016/j.elspec.2006.03.001",

language = "English",

volume = "152",

pages = "25--28",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN

AU - Colakerol, L

AU - Glans, PA

AU - Plucinski, L

AU - Zhang, Y

AU - Smith, KE

AU - Zakharov, Alexei

AU - Nyholm, Ralf

AU - Cabalu, J

AU - Moustakas, TD

PY - 2006

Y1 - 2006

N2 - Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.

AB - Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.

KW - surfaces

KW - photoemission

KW - semiconductors

KW - electronic structure

U2 - 10.1016/j.elspec.2006.03.001

DO - 10.1016/j.elspec.2006.03.001

M3 - Article

SN - 0368-2048

VL - 152

SP - 25

EP - 28

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - 1-2

ER -

Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN

Abstract

Subject classification (UKÄ)

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