Resonant states in doped quantum wells

Anders Blom, M A Odnoblyudov, I N Yassievich, Koung-An Chao

Research output: Contribution to journalArticlepeer-review

3 Citations (SciVal)

Abstract

Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an originally infinite distance.
Original languageEnglish
Pages (from-to)85-88
JournalPhysica Status Solidi. B: Basic Research
Volume235
Issue number1
DOIs
Publication statusPublished - 2003

Subject classification (UKÄ)

  • Condensed Matter Physics

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