RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz

Sofia Johansson, Elvedin Memisevic, Lars-Erik Wernersson, Erik Lind

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingResearchpeer-review

Abstract

We present RF characterization of vertical gateall- around InAs nanowire MOSFETs integrated on Si substrates with peak f(t) = 142 GHz and f(max) = 155 GHz, representing the record for vertical nanowire transistors. The devices has an L-g approximate to 150 nm with a g(m)=700 mS/mm for a nanowire diameter of 38 nm and an EOT = 1.4 nm. The high values of f(t) is achieved through electron beam lithography patterning of the gate and drain contact which substantially decreases the parasitic capacitances through reduction of the overlay capacitance, which is in good agreement with TCAD modeling.
Original languageEnglish
Title of host publication26th International Conference on Indium Phosphideand Related Materials (IPRM)
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Publication statusPublished - 2014
Event26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier, FRANCE
Duration: 2014 May 112014 May 15

Publication series

Name
ISSN (Print)1092-8669

Conference

Conference26th International Conference on Indium Phosphide and Related Materials (IPRM)
Period2014/05/112014/05/15

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering

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