RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

Guntrade Roll; Mikael Egard; Sofia Johannson; Lars Ohlsson; Lars Erik Wernersson; Erik Lind

doi:10.1109/IIRW.2013.6804151

RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

Guntrade Roll, Mikael Egard, Sofia Johannson, Lars Ohlsson, Lars Erik Wernersson, Erik Lind

Department of Electrical and Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al₂O₃/HfO₂ gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.

Original language	English
Title of host publication	2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	38-41
Number of pages	4
ISBN (Print)	9781479903504
DOIs	https://doi.org/10.1109/IIRW.2013.6804151
Publication status	Published - 2013 Jan 1
Event	2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 - South Lake Tahoe, CA, United States Duration: 2013 Oct 13 → 2013 Oct 17

Conference

Conference	2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
Country/Territory	United States
City	South Lake Tahoe, CA
Period	2013/10/13 → 2013/10/17

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

high-k
InGaAs
MOSFET
reliability
RF

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10.1109/IIRW.2013.6804151

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Roll, G., Egard, M., Johannson, S., Ohlsson, L., Wernersson, L. E., & Lind, E. (2013). RF reliability of gate last InGaAs nMOSFETs with high-k dielectric. In 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 (pp. 38-41). Article 6804151 IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2013.6804151

@inproceedings{99ea2c5f207c46b0b0bd390fbcbec42b,

title = "RF reliability of gate last InGaAs nMOSFETs with high-k dielectric",

abstract = "A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.",

keywords = "high-k, InGaAs, MOSFET, reliability, RF",

author = "Guntrade Roll and Mikael Egard and Sofia Johannson and Lars Ohlsson and Wernersson, {Lars Erik} and Erik Lind",

year = "2013",

month = jan,

day = "1",

doi = "10.1109/IIRW.2013.6804151",

language = "English",

isbn = "9781479903504",

pages = "38--41",

booktitle = "2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 ; Conference date: 13-10-2013 Through 17-10-2013",

}

Roll, G, Egard, M, Johannson, S, Ohlsson, L , Wernersson, LE & Lind, E 2013, RF reliability of gate last InGaAs nMOSFETs with high-k dielectric. in 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013., 6804151, IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 38-41, 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013, South Lake Tahoe, CA, United States, 2013/10/13. https://doi.org/10.1109/IIRW.2013.6804151

RF reliability of gate last InGaAs nMOSFETs with high-k dielectric. / Roll, Guntrade; Egard, Mikael; Johannson, Sofia et al.
2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013. IEEE - Institute of Electrical and Electronics Engineers Inc., 2013. p. 38-41 6804151.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

AU - Roll, Guntrade

AU - Egard, Mikael

AU - Johannson, Sofia

AU - Ohlsson, Lars

AU - Wernersson, Lars Erik

AU - Lind, Erik

PY - 2013/1/1

Y1 - 2013/1/1

N2 - A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.

AB - A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.

KW - high-k

KW - InGaAs

KW - MOSFET

KW - reliability

KW - RF

U2 - 10.1109/IIRW.2013.6804151

DO - 10.1109/IIRW.2013.6804151

M3 - Paper in conference proceeding

AN - SCOPUS:84900493882

SN - 9781479903504

SP - 38

EP - 41

BT - 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013

Y2 - 13 October 2013 through 17 October 2013

ER -

RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

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Subject classification (UKÄ)

Free keywords

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