Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors

Mohammad Karimi, Vishal Jain, Magnus Heurlin, Ali Nowzari, Laiq Hussain, David Lindgren, Jan Eric Stehr, Irina A. Buyanova, Anders Gustafsson, Lars Samuelson, Magnus Borgström, Håkan Pettersson

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Abstract

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n+–i–n+ InP nanowires periodically ordered in arrays. The nanowires were grown by metal–organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/[email protected] μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiOx/ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.
Original languageEnglish
Pages (from-to)3356–3362
JournalNano Letters
Volume17
Issue number6
DOIs
Publication statusPublished - 2017

Subject classification (UKÄ)

  • Nano Technology
  • Condensed Matter Physics

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