Rotated domain network in graphene on cubic-SiC(001)

Alexander N. Chaika, Olga V. Molodtsova, Alexei Zakharov, Dmitry Marchenko, Jaime Sanchez-Barriga, Andrei Varykhalov, Sergey V. Babenkov, Marc Portail, Marcin Zielinski, Barry E. Murphy, Sergey A. Krasnikov, Olaf Luebben, Igor V. Shvets, Victor Y. Aristov

Research output: Contribution to journalArticlepeer-review

Abstract

The atomic structure of the cubic-SiC(001) surface during ultra-high vacuum graphene synthesis has been studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by +/- 13.5 degrees relative to the < 110 >-directed boundaries. The preferential directions of the domain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2 x 2) reconstruction, fabricated prior to graphene synthesis. The presented data show the correlation between the atomic structures of the SiC(001)-c(2 x 2) surface and the graphene/SiC(001) rotated domain network and pave the way for optimizing large-area graphene synthesis on low-cost cubic-SiC(001)/Si(001) wafers.
Original languageEnglish
Article number135605
JournalNanotechnology
Volume25
Issue number13
DOIs
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Nano Technology

Free keywords

  • graphene
  • cubic-SiC(001)
  • nanoribbons
  • synthesis
  • STM imaging

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