Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Elvedin Memisevic; Johannes Svensson; Markus Hellenbrand; Erik Lind; Lars-Erik Wernersson

doi:10.1109/LED.2016.2545861

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Elvedin Memisevic, Johannes Svensson, Markus Hellenbrand, Erik Lind, Lars-Erik Wernersson

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Abstract

We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.

Original language	English
Pages (from-to)	549 - 552
Journal	IEEE Electron Device Letters
Volume	37
Issue number	5
DOIs	https://doi.org/10.1109/LED.2016.2545861
Publication status	Published - 2016 May 5

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

HSQ
nanowire
III-V
TFET
transistor
InAs-GaSb

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10.1109/LED.2016.2545861

Scaling of Vertical InAs-GaSb Nanowire TFET on Si_MemisevicAccepted author manuscript, 642 KB

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title = "Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si",

abstract = "We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.",

keywords = "HSQ, nanowire, III-V, TFET, transistor, InAs-GaSb",

author = "Elvedin Memisevic and Johannes Svensson and Markus Hellenbrand and Erik Lind and Lars-Erik Wernersson",

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doi = "10.1109/LED.2016.2545861",

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T1 - Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

AU - Memisevic, Elvedin

AU - Svensson, Johannes

AU - Hellenbrand, Markus

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2016/5/5

Y1 - 2016/5/5

N2 - We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.

AB - We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.

KW - HSQ

KW - nanowire

KW - III-V

KW - TFET

KW - transistor

KW - InAs-GaSb

UR - https://www.scopus.com/pages/publications/84964637866

U2 - 10.1109/LED.2016.2545861

DO - 10.1109/LED.2016.2545861

M3 - Letter

SN - 0741-3106

VL - 37

SP - 549

EP - 552

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

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Vertical III-V Nanowire Tunnel Field-Effect Transistor

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