Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

C Virojanadara; RA Glans; Balasubramanian Thiagarajan; LI Johansson; EB Macak; Q Wahab; LD Madsen

doi:10.1007/s11664-002-0121-8

Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

C Virojanadara, RA Glans, Balasubramanian Thiagarajan, LI Johansson, EB Macak, Q Wahab, LD Madsen

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.

Original language	English
Pages (from-to)	1353-1356
Journal	Journal of Electronic Materials
Volume	31
Issue number	12
DOIs	https://doi.org/10.1007/s11664-002-0121-8
Publication status	Published - 2002

Subject classification (UKÄ)

Physical Sciences
Natural Sciences

Free keywords

surface treatment
silicon carbide
contacts
Schottky barriers
Au/SiC
photoemission
capacitance-voltage
current-voltage

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10.1007/s11664-002-0121-8

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title = "Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation",

abstract = "The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.",

keywords = "surface treatment, silicon carbide, contacts, Schottky barriers, Au/SiC, photoemission, capacitance-voltage, current-voltage",

author = "C Virojanadara and RA Glans and Balasubramanian Thiagarajan and LI Johansson and EB Macak and Q Wahab and LD Madsen",

year = "2002",

doi = "10.1007/s11664-002-0121-8",

language = "English",

volume = "31",

pages = "1353--1356",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "12",

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TY - JOUR

T1 - Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

AU - Virojanadara, C

AU - Glans, RA

AU - Thiagarajan, Balasubramanian

AU - Johansson, LI

AU - Macak, EB

AU - Wahab, Q

AU - Madsen, LD

PY - 2002

Y1 - 2002

N2 - The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.

AB - The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.

KW - surface treatment

KW - silicon carbide

KW - contacts

KW - Schottky barriers

KW - Au/SiC

KW - photoemission

KW - capacitance-voltage

KW - current-voltage

U2 - 10.1007/s11664-002-0121-8

DO - 10.1007/s11664-002-0121-8

M3 - Article

SN - 0361-5235

VL - 31

SP - 1353

EP - 1356

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

Abstract

Subject classification (UKÄ)

Free keywords

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