Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

Muhammed Ihab Schukfeh; Allan Hansen; Marc Tornow; Kristian Storm; Kimberly Dick Thelander; Claes Thelander; Lars Samuelson; Peter Hinze; Thomas Weimann; Nelia Wanderka

doi:10.1109/NANO.2015.7388924

Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

Muhammed Ihab Schukfeh, Allan Hansen, Marc Tornow, Kristian Storm, Kimberly Dick Thelander, Claes Thelander, Lars Samuelson, Peter Hinze, Thomas Weimann, Nelia Wanderka

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	1489-1492
Number of pages	4
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388924
Publication status	Published - 2016 Jan 20
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015 Jul 27 → 2015 Jul 30

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	2015/07/27 → 2015/07/30

Subject classification (UKÄ)

Nano-technology
Condensed Matter Physics (including Material Physics, Nano Physics)

Free keywords

heterostructure nanowire
InAs/InP
nanogap electrodes
selective etching

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10.1109/NANO.2015.7388924

Cite this

Schukfeh, M. I., Hansen, A., Tornow, M., Storm, K., Thelander, K. D., Thelander, C., Samuelson, L., Hinze, P., Weimann, T., & Wanderka, N. (2016). Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1489-1492). Article 7388924 IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388924

@inproceedings{e7b098cdbf754d459e54f3138d0c60d9,

title = "Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps",

abstract = "We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.",

keywords = "heterostructure nanowire, InAs/InP, nanogap electrodes, selective etching",

author = "Schukfeh, {Muhammed Ihab} and Allan Hansen and Marc Tornow and Kristian Storm and Thelander, {Kimberly Dick} and Claes Thelander and Lars Samuelson and Peter Hinze and Thomas Weimann and Nelia Wanderka",

year = "2016",

month = jan,

day = "20",

doi = "10.1109/NANO.2015.7388924",

language = "English",

pages = "1489--1492",

booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

}

Schukfeh, MI, Hansen, A, Tornow, M, Storm, K, Thelander, KD , Thelander, C , Samuelson, L, Hinze, P, Weimann, T & Wanderka, N 2016, Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388924, IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 1489-1492, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 2015/07/27. https://doi.org/10.1109/NANO.2015.7388924

Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps. / Schukfeh, Muhammed Ihab; Hansen, Allan; Tornow, Marc et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. IEEE - Institute of Electrical and Electronics Engineers Inc., 2016. p. 1489-1492 7388924.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

AU - Schukfeh, Muhammed Ihab

AU - Hansen, Allan

AU - Tornow, Marc

AU - Storm, Kristian

AU - Thelander, Kimberly Dick

AU - Thelander, Claes

AU - Samuelson, Lars

AU - Hinze, Peter

AU - Weimann, Thomas

AU - Wanderka, Nelia

PY - 2016/1/20

Y1 - 2016/1/20

N2 - We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.

AB - We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.

KW - heterostructure nanowire

KW - InAs/InP

KW - nanogap electrodes

KW - selective etching

UR - http://www.scopus.com/inward/record.url?scp=84964389237&partnerID=8YFLogxK

U2 - 10.1109/NANO.2015.7388924

DO - 10.1109/NANO.2015.7388924

M3 - Paper in conference proceeding

AN - SCOPUS:84964389237

SP - 1489

EP - 1492

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Y2 - 27 July 2015 through 30 July 2015

ER -

Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps

Abstract

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Subject classification (UKÄ)

Free keywords

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