Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

Mikael Egard; Lars Ohlsson; B. Borg; Lars Erik Wernersson; Erik Lind

doi:10.1109/DRC.2011.6086641

Self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET with selectively regrown source and drain contact layers

Mikael Egard, Lars Ohlsson, B. Borg, Lars Erik Wernersson, Erik Lind

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.

Original language	English
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781612842417
DOIs	https://doi.org/10.1109/DRC.2011.6086641
Publication status	Published - 2011 Dec 1
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: 2011 Jun 20 → 2011 Jun 22

Conference

Conference	69th Device Research Conference, DRC 2011
Country/Territory	United States
City	Santa Barbara, CA
Period	2011/06/20 → 2011/06/22

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

Access to Document

10.1109/DRC.2011.6086641

Cite this

Egard, M., Ohlsson, L., Borg, B., Wernersson, L. E., & Lind, E. (2011). Self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET with selectively regrown source and drain contact layers. In 69th Device Research Conference, DRC 2011 - Conference Digest Article 6086641 IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2011.6086641

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title = "Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers",

abstract = "III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.",

author = "Mikael Egard and Lars Ohlsson and B. Borg and Wernersson, {Lars Erik} and Erik Lind",

year = "2011",

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doi = "10.1109/DRC.2011.6086641",

language = "English",

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booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

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note = "69th Device Research Conference, DRC 2011 ; Conference date: 20-06-2011 Through 22-06-2011",

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Egard, M, Ohlsson, L , Borg, B , Wernersson, LE & Lind, E 2011, Self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET with selectively regrown source and drain contact layers. in 69th Device Research Conference, DRC 2011 - Conference Digest., 6086641, IEEE - Institute of Electrical and Electronics Engineers Inc., 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 2011/06/20. https://doi.org/10.1109/DRC.2011.6086641

Self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET with selectively regrown source and drain contact layers. / Egard, Mikael; Ohlsson, Lars ; Borg, B. et al.
69th Device Research Conference, DRC 2011 - Conference Digest. IEEE - Institute of Electrical and Electronics Engineers Inc., 2011. 6086641.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

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AU - Lind, Erik

PY - 2011/12/1

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N2 - III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.

AB - III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.

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