Semiconductor nanowires for 0D and 1D physics and applications

Lars Samuelson; Claes Thelander; Mikael Björk; Magnus Borgström; Knut Deppert; Kimberly Dick Thelander; Adam Hansen; Thomas Mårtensson; Nikolay Panev; Ann Persson; Werner Seifert; Niklas Sköld; Magnus Larsson; Reine Wallenberg

doi:10.1016/j.physe.2004.06.030

Semiconductor nanowires for 0D and 1D physics and applications

Lars Samuelson, Claes Thelander, Mikael Björk, Magnus Borgström, Knut Deppert, Kimberly Dick Thelander, Adam Hansen, Thomas Mårtensson, Nikolay Panev, Ann Persson, Werner Seifert, Niklas Sköld, Magnus Larsson, Reine Wallenberg

Research output: Contribution to journal › Article › peer-review

Abstract

During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	313-318
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	25
Issue number	2-3
DOIs	https://doi.org/10.1016/j.physe.2004.06.030
Publication status	Published - 2004

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

Subject classification (UKÄ)

Chemical Sciences
Condensed Matter Physics

Free keywords

Nanowires
Quantum confinement
Single-electron tunneling68.65.−k
78.67.Lt
73.63.−b
73.23.Hk
Heterostructures

Access to Document

10.1016/j.physe.2004.06.030

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden
Wallenberg, R. (Manager)
Centre for Analysis and Synthesis
Infrastructure

Cite this

Samuelson, L., Thelander, C., Björk, M., Borgström, M., Deppert, K., Dick Thelander, K., Hansen, A., Mårtensson, T., Panev, N., Persson, A., Seifert, W., Sköld, N., Larsson, M., & Wallenberg, R. (2004). Semiconductor nanowires for 0D and 1D physics and applications. Physica E: Low-Dimensional Systems and Nanostructures, 25(2-3), 313-318. https://doi.org/10.1016/j.physe.2004.06.030

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title = "Semiconductor nanowires for 0D and 1D physics and applications",

abstract = "During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.",

keywords = "Nanowires, Quantum confinement, Single-electron tunneling68.65.−k, 78.67.Lt, 73.63.−b, 73.23.Hk, Heterostructures",

author = "Lars Samuelson and Claes Thelander and Mikael Bj{\"o}rk and Magnus Borgstr{\"o}m and Knut Deppert and {Dick Thelander}, Kimberly and Adam Hansen and Thomas M{\aa}rtensson and Nikolay Panev and Ann Persson and Werner Seifert and Niklas Sk{\"o}ld and Magnus Larsson and Reine Wallenberg",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)",

year = "2004",

doi = "10.1016/j.physe.2004.06.030",

language = "English",

volume = "25",

pages = "313--318",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

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Samuelson, L , Thelander, C, Björk, M, Borgström, M , Deppert, K , Dick Thelander, K, Hansen, A, Mårtensson, T, Panev, N, Persson, A, Seifert, W, Sköld, N, Larsson, M & Wallenberg, R 2004, 'Semiconductor nanowires for 0D and 1D physics and applications', Physica E: Low-Dimensional Systems and Nanostructures, vol. 25, no. 2-3, pp. 313-318. https://doi.org/10.1016/j.physe.2004.06.030

TY - JOUR

T1 - Semiconductor nanowires for 0D and 1D physics and applications

AU - Samuelson, Lars

AU - Thelander, Claes

AU - Björk, Mikael

AU - Borgström, Magnus

AU - Deppert, Knut

AU - Dick Thelander, Kimberly

AU - Hansen, Adam

AU - Mårtensson, Thomas

AU - Panev, Nikolay

AU - Persson, Ann

AU - Seifert, Werner

AU - Sköld, Niklas

AU - Larsson, Magnus

AU - Wallenberg, Reine

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

PY - 2004

Y1 - 2004

N2 - During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.

AB - During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.

KW - Nanowires

KW - Quantum confinement

KW - Single-electron tunneling68.65.−k

KW - 78.67.Lt

KW - 73.63.−b

KW - 73.23.Hk

KW - Heterostructures

U2 - 10.1016/j.physe.2004.06.030

DO - 10.1016/j.physe.2004.06.030

M3 - Article

SN - 1386-9477

VL - 25

SP - 313

EP - 318

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-3

ER -

Semiconductor nanowires for 0D and 1D physics and applications

Abstract

Bibliographical note

Subject classification (UKÄ)

Free keywords

Access to Document

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Equipment

National Center for High Resolution Electron Microscopy - ARTEMI Atomic Resolution TEM infrastructure of Sweden

Cite this