Si measurements: SiOx on Si

S. Kalem, S. B. Tekin, Z. E. Kaya, A. E. Hannas, Villy Sundström

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

We review the results of silicon measurements, which we have performed on suboxide SiOx formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminescence (PL), energy critical points for optical transitions, excited state dynamics and non-linear electrical properties can be used as effective methods in investigating thin oxide layers on Si. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicating that disorder induced LO-TO optical mode coupling can be an effective tool in assessing the structural quality of the SiOx. Excited carrier dynamics and switching mechanisms can provide critical information about electronic quality of sub oxides for applications in CMOS circuits.

Original languageEnglish
Title of host publicationJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Pages235-238
Number of pages4
ISBN (Electronic)9781509053131
DOIs
Publication statusPublished - 2017 Jun 29
Event2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Athens, Greece
Duration: 2017 Apr 32017 Apr 5

Publication series

Name
ISSN (Electronic)2472-9132

Conference

Conference2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017
Country/TerritoryGreece
CityAthens
Period2017/04/032017/04/05

Subject classification (UKÄ)

  • Atom and Molecular Physics and Optics

Free keywords

  • electrical and optical methods
  • ellipsometry
  • FDSOI
  • photoluminescence
  • SiO on Si

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