TY - GEN
T1 - Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
AU - Berg, Martin
AU - Persson, Karl-Magnus
AU - Lind, Erik
AU - Sjöland, Henrik
AU - Wernersson, Lars-Erik
PY - 2014
Y1 - 2014
N2 - We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
AB - We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
M3 - Paper in conference proceeding
BT - 26th International Conference on Indium Phosphideand Related Materials (IPRM)
PB - IEEE - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Conference on Indium Phosphide and Related Materials (IPRM)
Y2 - 11 May 2014 through 15 May 2014
ER -