Single-electron transistors in heterostructure nanowires.

Claes Thelander; Thomas Mårtensson; Mikael Björk; B J Ohlsson; Marcus Larsson; Reine Wallenberg; Lars Samuelson

doi:10.1063/1.1606889

Single-electron transistors in heterostructure nanowires.

Claes Thelander, Thomas Mårtensson, Mikael Björk, B J Ohlsson, Marcus Larsson, Reine Wallenberg, Lars Samuelson

Research output: Contribution to journal › Article › peer-review

Abstract

Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.

Original language	English
Pages (from-to)	2052-2054
Journal	Applied Physics Letters
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.1606889
Publication status	Published - 2003

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006), Neuronano Research Center (NRC) (013210020), NanoLund (011012012)

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Chemical Sciences

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10.1063/1.1606889

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title = "Single-electron transistors in heterostructure nanowires.",

abstract = "Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. {\textcopyright}2003 American Institute of Physics.",

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AU - Thelander, Claes

AU - Mårtensson, Thomas

AU - Björk, Mikael

AU - Ohlsson, B J

AU - Larsson, Marcus

AU - Wallenberg, Reine

AU - Samuelson, Lars

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006), Neuronano Research Center (NRC) (013210020), NanoLund (011012012)

PY - 2003

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AB - Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.

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M3 - Article

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EP - 2054

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Single-electron transistors in heterostructure nanowires.

Abstract

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