@article{7c76855544e145ddacfd3bde57760047,
title = "Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point",
abstract = "Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]",
author = "Jesper Wallentin and Poncela, {Laura Barrutia} and Jansson, {Anna M.} and Kilian Mergenthaler and Martin Ek and Daniel Jacobsson and Reine Wallenberg and Knut Deppert and Lars Samuelson and Dan Hessman and Magnus Borgstr{\"o}m",
note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)",
year = "2012",
doi = "10.1063/1.4729929",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "25",
}