Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Jesper Wallentin, Laura Barrutia Poncela, Anna M. Jansson, Kilian Mergenthaler, Martin Ek, Daniel Jacobsson, Reine Wallenberg, Knut Deppert, Lars Samuelson, Dan Hessman, Magnus Borgström

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Abstract

Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]
Original languageEnglish
JournalApplied Physics Letters
Volume100
Issue number25
DOIs
Publication statusPublished - 2012

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)

Subject classification (UKÄ)

  • Condensed Matter Physics
  • Chemical Sciences

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