Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

Magnus Borgström; Tomas Bryllert; T. Sass; Lars-Erik Wernersson; Lars Samuelson; Werner Seifert

Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

Magnus Borgström, Tomas Bryllert, T. Sass, Lars-Erik Wernersson, Lars Samuelson, Werner Seifert

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface

Original language	English
Title of host publication	7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Publisher	Lund University
Number of pages	2
Publication status	Published - 2002
Event	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden Duration: 2002 Jun 24 → 2002 Jun 28

Conference

Conference	Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Country/Territory	Sweden
City	Malmö
Period	2002/06/24 → 2002/06/28

Subject classification (UKÄ)

Condensed Matter Physics
Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

selective dot nucleation
arsine ambient
InAs-InP
nanoholes
patterned InP surface
InAs quantum dots
As/P exchange reactions
annealing temperature
annealing time
InAs/InP site controlled quantum dot growth
electron beam prepatterning forms
carbon nanodeposits
growth masks
InP surface

Cite this

@inproceedings{6573236054bc4d8f917bb62b3313a6c8,

title = "Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions",

abstract = "We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface",

keywords = "selective dot nucleation, arsine ambient, InAs-InP, nanoholes, patterned InP surface, InAs quantum dots, As/P exchange reactions, annealing temperature, annealing time, InAs/InP site controlled quantum dot growth, electron beam prepatterning forms, carbon nanodeposits, growth masks, InP surface",

author = "Magnus Borgstr{\"o}m and Tomas Bryllert and T. Sass and Lars-Erik Wernersson and Lars Samuelson and Werner Seifert",

year = "2002",

language = "English",

booktitle = "7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science",

publisher = "Lund University",

note = "Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) ; Conference date: 24-06-2002 Through 28-06-2002",

}

Borgström, M, Bryllert, T, Sass, T, Wernersson, L-E , Samuelson, L & Seifert, W 2002, Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions. in 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21), Malmö, Sweden, 2002/06/24.

Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions. / Borgström, Magnus; Bryllert, Tomas; Sass, T. et al.
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund University, 2002.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

AU - Borgström, Magnus

AU - Bryllert, Tomas

AU - Sass, T.

AU - Wernersson, Lars-Erik

AU - Samuelson, Lars

AU - Seifert, Werner

PY - 2002

Y1 - 2002

N2 - We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface

AB - We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface

KW - selective dot nucleation

KW - arsine ambient

KW - InAs-InP

KW - nanoholes

KW - patterned InP surface

KW - InAs quantum dots

KW - As/P exchange reactions

KW - annealing temperature

KW - annealing time

KW - InAs/InP site controlled quantum dot growth

KW - electron beam prepatterning forms

KW - carbon nanodeposits

KW - growth masks

KW - InP surface

M3 - Paper in conference proceeding

BT - 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

PB - Lund University

T2 - Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Y2 - 24 June 2002 through 28 June 2002

ER -

Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

Abstract

Conference

Subject classification (UKÄ)

Free keywords

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Cite this