Site-controlled Ge quantum dot growth on Si by the use of electron beam pre-patterning

Magnus Borgström, Vilma Zela, Werner Seifert, Lars Samuelson

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

By growth of Si on substrates that have been pre-patterned by electron-beam induced carbon nano-growth masks, nano-holes form at the Si surface. We have grown self-assembled Ge quantum dots in these holes by ultra high vacuum chemical vapour phase deposition (UHV-CVD). We usually find four dots in each hole. By varying the amount of deposited Ge, we can obtain either four dome-shaped or four pyramid-shaped dots in the majority of holes. These dot arrangements could be used for the realisation of the simplest functional cell for quantum-dot cellular automata (QCA)
Original languageEnglish
Title of host publication7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
PublisherLund University
Number of pages2
Publication statusPublished - 2002
EventProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden
Duration: 2002 Jun 242002 Jun 28

Conference

ConferenceProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Country/TerritorySweden
CityMalmö
Period2002/06/242002/06/28

Subject classification (UKÄ)

  • Condensed Matter Physics

Keywords

  • site controlled Ge quantum dot growth
  • Si substrate
  • Si
  • electron beam prepatterning
  • self assembly
  • ultra high vacuum chemical vapour phase deposition
  • carbon nanogrowth masks
  • four pyramid shaped dots
  • dome shaped dots
  • simplest functional cell
  • Ge
  • quantum dot cellular automata

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