Abstract
A readily mass-producible, flip-chip assembled, and slot-coupled III-V compound semiconductor dielectric resonator antenna operating in the millimeter-wave spectrum has been fabricated and characterized. The antenna has a 6.1% relative bandwidth, deduced from its 10 dB return loss over 58.8-62.5 GHz, located around the resonance at 60.5 GHz. Gating in the delay-domain alleviated the analysis of the complex response from the measured structure. The radiation efficiency is better than -0.1 dB in simulations fed from the on-chip coupling-structure, but reduced by 3.7 dB insertion loss through the measurement assembly feed. Antenna gain measurements show distortion in relation to the simulated pattern, which has a maximum gain of 6 dBi, mainly caused by interference from the electrically large connector used in the assembly. Mode degeneration in the utilized quadratic-footprint resonator was not seen to influence the performance of the antenna. The antenna is intended for on-chip integration and the fabrication technology allows scaling of the operation frequency over the complete millimeter-wave spectrum.
| Original language | English |
|---|---|
| Pages (from-to) | 1599-1607 |
| Journal | IEEE Transactions on Antennas and Propagation |
| Volume | 61 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2013 |
Subject classification (UKÄ)
- Condensed Matter Physics (including Material Physics, Nano Physics)
- Electrical Engineering, Electronic Engineering, Information Engineering
Free keywords
- Antenna efficiency
- dielectric resonator antennas (DRAs)
- millimeter-wave antennas
- millimeter-wave communication