Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings

D. Csontos, Patrik Brusheim, U. Zuelicke, Hongqi Xu

Research output: Contribution to journalArticlepeer-review

37 Citations (SciVal)

Abstract

We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation in subband-edge g factors between different subbands. We elucidate the interplay between quantum confinement and heavy-hole-light-hole mixing and identify a certain robustness displayed by low-lying hole-wire subband edges with respect to changes in the shape or strength of the wire potential. The ability to address individual subband edges in, e.g., transport or optical experiments enables the study of hole states with nonstandard spin polarization, which do not exist in spin-3/2 systems. Changing the aspect ratio of hole wires with rectangular cross section turns out to strongly affect the g factor of subband edges, providing an opportunity for versatile in situ tuning of hole-spin properties with possible application in spintronics. The relative importance of cubic crystal symmetry is discussed, as well as the spin splitting away from zone-center subband edges.
Original languageEnglish
Article number155323
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume79
Issue number15
DOIs
Publication statusPublished - 2009

Subject classification (UKÄ)

  • Condensed Matter Physics

Keywords

  • spin polarised transport
  • semiconductor quantum wires
  • nanowires
  • magnetoelectronics
  • g-factor
  • bound states
  • crystal symmetry
  • spin
  • systems
  • valence bands
  • Zeeman effect

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