Spin relaxation in InAs nanowires studied by tunable weak antilocalization

Adam Hansen, Mikael Björk, Carina Fasth, Claes Thelander, Lars Samuelson

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114 Citations (SciVal)

Abstract

We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.
Original languageEnglish
Pages (from-to)205328-1-205328-5
JournalPhysical Review B. Condensed Matter and Materials Physics
Volume71
DOIs
Publication statusPublished - 2005

Subject classification (UKÄ)

  • Condensed Matter Physics

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