We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.
|Journal||Physical Review B. Condensed Matter and Materials Physics|
|Publication status||Published - 2005|
Subject classification (UKÄ)
- Condensed Matter Physics