Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces

Magnus Borgström; Lars Samuelson; Werner Seifert; Anders Mikkelsen; Lassana Ouattara; Edvin Lundgren

doi:10.1063/1.1632542

Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces

Magnus Borgström, Lars Samuelson, Werner Seifert, Anders Mikkelsen, Lassana Ouattara, Edvin Lundgren

Research output: Contribution to journal › Article › peer-review

Abstract

We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.

Original language	English
Pages (from-to)	4830-4832
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1632542
Publication status	Published - 2003

Subject classification (UKÄ)

Atom and Molecular Physics and Optics
Condensed Matter Physics

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10.1063/1.1632542

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title = "Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces",

abstract = "We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.",

author = "Magnus Borgstr{\"o}m and Lars Samuelson and Werner Seifert and Anders Mikkelsen and Lassana Ouattara and Edvin Lundgren",

year = "2003",

doi = "10.1063/1.1632542",

language = "English",

volume = "83",

pages = "4830--4832",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics (AIP)",

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TY - JOUR

T1 - Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces

AU - Borgström, Magnus

AU - Samuelson, Lars

AU - Seifert, Werner

AU - Mikkelsen, Anders

AU - Ouattara, Lassana

AU - Lundgren, Edvin

PY - 2003

Y1 - 2003

N2 - We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.

AB - We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.

U2 - 10.1063/1.1632542

DO - 10.1063/1.1632542

M3 - Article

SN - 0003-6951

VL - 83

SP - 4830

EP - 4832

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces

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Subject classification (UKÄ)

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