Studies on electronical properties of defects in silicon and gallium arsenide

Mats Kleverman

Studies on electronical properties of defects in silicon and gallium arsenide

Mats Kleverman

Department of Physics

Research output: Thesis › Doctoral Thesis (compilation)

Abstract

[abstract missing]

Original language	English
Qualification	Doctor
Awarding Institution	Department of Physics
Supervisors/Advisors	[unknown], [unknown], Supervisor, External person
Award date	1985 Jan 1
Publisher	Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
Publication status	Published - 1985

Bibliographical note

Defence details

Date: 1985-01-01
Time: 10:15
Place: Fysiska Institutionens föreläsningssal

External reviewer(s)

Name: [unknown], [unknown]
Title: [unknown]
Affiliation: [unknown]

---

Subject classification (UKÄ)

Physical Sciences

Free keywords

Fysicumarkivet A:1985:Kleverman

Cite this

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AU - Kleverman, Mats

N1 - Defence details Date: 1985-01-01 Time: 10:15 Place: Fysiska Institutionens föreläsningssal External reviewer(s) Name: [unknown], [unknown] Title: [unknown] Affiliation: [unknown] ---

PY - 1985

Y1 - 1985

N2 - [abstract missing]

AB - [abstract missing]

KW - Fysicumarkivet A:1985:Kleverman

M3 - Doctoral Thesis (compilation)

PB - Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

ER -

Studies on electronical properties of defects in silicon and gallium arsenide

Abstract

Bibliographical note

Subject classification (UKÄ)

Free keywords

Fingerprint

Cite this