Abstract
Magneto-transport properties of a Ga0.93Mn0.07As ferromagnetic semiconductor film with strong epitaxial strain (Ga0.7In0.3As buffer) have been studied. The observed magnetoresistance showed peculiar peaks at the magnetic fields corresponding to magnetization switching probed by Hall voltage. Computer simulations showed that these anomalies could originate from the formation of complex, island-like magnetic domains, and their propagation in the sample.
Original language | English |
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Pages (from-to) | 093708-093708-4 |
Journal | Applied Physics Reviews |
Volume | 113 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2013 |
Subject classification (UKÄ)
- Physical Sciences
- Natural Sciences