Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs

Piotr Juszynski, Dariusz Wasik, Marta Gryglas-Borysiewicz, Janusz Sadowski

Research output: Contribution to journalArticlepeer-review

Abstract

Magneto-transport properties of a Ga0.93Mn0.07As ferromagnetic semiconductor film with strong epitaxial strain (Ga0.7In0.3As buffer) have been studied. The observed magnetoresistance showed peculiar peaks at the magnetic fields corresponding to magnetization switching probed by Hall voltage. Computer simulations showed that these anomalies could originate from the formation of complex, island-like magnetic domains, and their propagation in the sample.
Original languageEnglish
Pages (from-to)093708-093708-4
JournalApplied Physics Reviews
Volume113
Issue number9
DOIs
Publication statusPublished - 2013

Subject classification (UKÄ)

  • Physical Sciences
  • Natural Sciences

Fingerprint

Dive into the research topics of 'Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs'. Together they form a unique fingerprint.

Cite this