Sulfur passivation for ohmic contact formation to InAs nanowires

Dmitry Suyatin, Claes Thelander, M. T. Björk, Ivan Maximov, Lars Samuelson

Research output: Contribution to journalArticlepeer-review

Abstract

We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and passivation of the contact areas in an ammonium polysulfide, (NH4)(2)S-x, water solution. The nanowires were exposed to different dilution levels of the (NH4)(2)Sx solution before contact metal evaporation. A process based on a highly diluted ( NH4)S-2(x) solution was found to be self-terminating, with minimal etching of the InAs. The stability of the contacts was investigated with electrical measurements as a function of storage time in vacuum and air.
Original languageEnglish
Article number105307
JournalNanotechnology
Volume18
Issue number10
DOIs
Publication statusPublished - 2007

Subject classification (UKÄ)

  • Nano-technology

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