Surface states on GaN(000(1)over-bar)(1x1) - an angle-resolved photoemission study

BJ Kowalski, RJ Iwanowski, Janusz Sadowski, J Kanski, I Grzegory, S Porowski

Research output: Contribution to journalArticlepeer-review

Abstract

We present the results of angle-resolved photoemission studies on the (0 0 0 (1) over bar) (N-polar) surface of bulk gallium nitride crystals. The bulk and surface band Structure was investigated along Gamma-A and Gamma-K-M directions on the surface with (1 x 1) symmetry. The sets of spectra were obtained in normal and off-normal emission for the surface prepared by Ar+ ion sputtering and annealing and for the same surface enriched with Ga under molecular beam epitaxy conditions. The bulk and surface related features were identified by analysis of the acquired experimental data and by comparison with the results of band structure Calculations.
Original languageEnglish
Pages (from-to)186-191
JournalSurface Science
Volume507
Publication statusPublished - 2002

Subject classification (UKÄ)

  • Natural Sciences
  • Physical Sciences

Keywords

  • surface potential
  • function
  • angle resolved photoemission
  • surface electronic phenomena (work
  • surface states
  • etc.)
  • gallium nitride
  • single crystal surfaces

Fingerprint

Dive into the research topics of 'Surface states on GaN(000(1)over-bar)(1x1) - an angle-resolved photoemission study'. Together they form a unique fingerprint.

Cite this