TY - CHAP
T1 - Surface Studies by Low-Energy Electron Diffraction and Reflection High-Energy-Electron Diffraction
AU - Laukkanen, Pekka
AU - Sadowski, Janusz
AU - Guina, Mircea
PY - 2012
Y1 - 2012
N2 - In this chapter, we present the basic concepts of the low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to provide an overview of the exploitation of these instrumental methods for analyzing the surfaces of technologically important III–V compound semiconductors. In particular, the interpretation of LEED and RHEED patterns is discussed for the most representative reconstructions of GaAs(100), GaInAsN(100), and Bi-stabilized III–V(100) surfaces. Other application examples concern the use of RHEED for optimizing the growth conditions and growth rates used in molecular beam epitaxy of III–V device heterostructures.
AB - In this chapter, we present the basic concepts of the low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to provide an overview of the exploitation of these instrumental methods for analyzing the surfaces of technologically important III–V compound semiconductors. In particular, the interpretation of LEED and RHEED patterns is discussed for the most representative reconstructions of GaAs(100), GaInAsN(100), and Bi-stabilized III–V(100) surfaces. Other application examples concern the use of RHEED for optimizing the growth conditions and growth rates used in molecular beam epitaxy of III–V device heterostructures.
KW - Low energy electron diffraction
KW - reflection high energy electron diffraction
KW - semiconductor surfaces
KW - surface reconstruction
UR - https://www.scopus.com/pages/publications/84884088194
M3 - Book chapter
VL - 150
SP - 1
EP - 21
BT - Springer Series in Materials Science
A2 - Patane, A.
A2 - Balkan, N.
PB - Springer
ER -