Suspended InAsnanowire gate-all-around field-effect transistors

Qiang Li, Shaoyun Huang, Dong Pan, Jingyun Wang, Jianhua Zhao, Hongqi Xu

Research output: Contribution to journalArticlepeer-review


Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires. (C) 2014 A1P Publishing LLC.
Original languageEnglish
Article number113106
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Condensed Matter Physics


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