Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.

Magnus Heurlin; Olof Hultin; Kristian Storm; David Lindgren; Magnus Borgström; Lars Samuelson

doi:10.1021/nl404039d

Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.

Magnus Heurlin, Olof Hultin, Kristian Storm, David Lindgren, Magnus Borgström, Lars Samuelson

Research output: Contribution to journal › Article › peer-review

Abstract

InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.

Original language	English
Pages (from-to)	749-753
Journal	Nano Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1021/nl404039d
Publication status	Published - 2014

Subject classification (UKÄ)

Nano Technology

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10.1021/nl404039d

2 Doctoral Thesis (compilation)

Nanostructures for Optoelectronics: Device Fabrication and Characterization
Hultin, O., 2018 Apr 18, Division of Solid State Physics, Department of Physics, Lund University, Box 118, SE-221 00 Lund, Sweden,.
Research output: Thesis › Doctoral Thesis (compilation)

File
Growth of Semiconductor Nanowires for Solar Cell Applications
Heurlin, M., 2015, 148 p.
Research output: Thesis › Doctoral Thesis (compilation)

File

Cite this

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title = "Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.",

abstract = "InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.",

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doi = "10.1021/nl404039d",

language = "English",

volume = "14",

pages = "749--753",

journal = "Nano Letters",

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publisher = "The American Chemical Society (ACS)",

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T1 - Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.

AU - Heurlin, Magnus

AU - Hultin, Olof

AU - Storm, Kristian

AU - Lindgren, David

AU - Borgström, Magnus

AU - Samuelson, Lars

PY - 2014

Y1 - 2014

N2 - InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.

AB - InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.

U2 - 10.1021/nl404039d

DO - 10.1021/nl404039d

M3 - Article

SN - 1530-6992

VL - 14

SP - 749

EP - 753

JO - Nano Letters

JF - Nano Letters

IS - 2

ER -

Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.

Abstract

Subject classification (UKÄ)

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Research output

Nanostructures for Optoelectronics: Device Fabrication and Characterization

Growth of Semiconductor Nanowires for Solar Cell Applications

Cite this