Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing

Qiujun Zhang; Yuanhuan Cao; Kan Li; Huayong Pan; Shaoyun Huang; Yingjie Xing; H. Q. Xu

doi:10.1016/j.jpcs.2017.05.031

Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing

Qiujun Zhang, Yuanhuan Cao, Kan Li, Huayong Pan, Shaoyun Huang, Yingjie Xing, H. Q. Xu

Peking University

Research output: Contribution to journal › Article › peer-review

Abstract

A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb nanowires are obtained by annealing In/Sb nanostructures at 200 °C. Triple-layer In/Mn/Sb nanostructures are formed by the similar three-step depositions. Mn-doped InSb nanowires are prepared by annealing In/Mn/Sb nanostructures. Transmission electron microscopy and energy-dispersive X-ray spectroscopy are used to analyze the structure and elemental distribution of the nanostructures. Our result shows that Mn-doped InSb nanowires can be achieved by employing solid reaction at low annealing temperature.

Original language	English
Pages (from-to)	43-48
Number of pages	6
Journal	Journal of Physics and Chemistry of Solids
Volume	110
DOIs	https://doi.org/10.1016/j.jpcs.2017.05.031
Publication status	Published - 2017 Nov 1

Subject classification (UKÄ)

Condensed Matter Physics
Nano Technology

Free keywords

Impurities in semiconductors
Nanostructured materials
Semiconductors
Solid state reactions

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10.1016/j.jpcs.2017.05.031

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title = "Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing",

abstract = "A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb nanowires are obtained by annealing In/Sb nanostructures at 200 °C. Triple-layer In/Mn/Sb nanostructures are formed by the similar three-step depositions. Mn-doped InSb nanowires are prepared by annealing In/Mn/Sb nanostructures. Transmission electron microscopy and energy-dispersive X-ray spectroscopy are used to analyze the structure and elemental distribution of the nanostructures. Our result shows that Mn-doped InSb nanowires can be achieved by employing solid reaction at low annealing temperature.",

keywords = "Impurities in semiconductors, Nanostructured materials, Semiconductors, Solid state reactions",

author = "Qiujun Zhang and Yuanhuan Cao and Kan Li and Huayong Pan and Shaoyun Huang and Yingjie Xing and Xu, {H. Q.}",

year = "2017",

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doi = "10.1016/j.jpcs.2017.05.031",

language = "English",

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journal = "Journal of Physics and Chemistry of Solids",

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TY - JOUR

T1 - Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing

AU - Zhang, Qiujun

AU - Cao, Yuanhuan

AU - Li, Kan

AU - Pan, Huayong

AU - Huang, Shaoyun

AU - Xing, Yingjie

AU - Xu, H. Q.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb nanowires are obtained by annealing In/Sb nanostructures at 200 °C. Triple-layer In/Mn/Sb nanostructures are formed by the similar three-step depositions. Mn-doped InSb nanowires are prepared by annealing In/Mn/Sb nanostructures. Transmission electron microscopy and energy-dispersive X-ray spectroscopy are used to analyze the structure and elemental distribution of the nanostructures. Our result shows that Mn-doped InSb nanowires can be achieved by employing solid reaction at low annealing temperature.

AB - A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb nanowires are obtained by annealing In/Sb nanostructures at 200 °C. Triple-layer In/Mn/Sb nanostructures are formed by the similar three-step depositions. Mn-doped InSb nanowires are prepared by annealing In/Mn/Sb nanostructures. Transmission electron microscopy and energy-dispersive X-ray spectroscopy are used to analyze the structure and elemental distribution of the nanostructures. Our result shows that Mn-doped InSb nanowires can be achieved by employing solid reaction at low annealing temperature.

KW - Impurities in semiconductors

KW - Nanostructured materials

KW - Semiconductors

KW - Solid state reactions

UR - http://www.scopus.com/inward/record.url?scp=85019974830&partnerID=8YFLogxK

U2 - 10.1016/j.jpcs.2017.05.031

DO - 10.1016/j.jpcs.2017.05.031

M3 - Article

AN - SCOPUS:85019974830

SN - 0022-3697

VL - 110

SP - 43

EP - 48

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

ER -

Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing

Abstract

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