Abstract
Metal-assisted chemical etching (MACE) is a cheap and scalable method that is commonly used to obtain silicon nano- or microwires but lacks spatial control. Herein, we present a synthesis method for producing vertical and highly periodic silicon microwires, using displacement Talbot lithography before wet etching with MACE. The functionalized periodic silicon microwires show 65% higher PEC performance and 2.3 mA/cm2 higher net photocurrent at 0 V compared to functionalized, randomly distributed microwires obtained by conventional MACE at the same potentials.
| Original language | English |
|---|---|
| Pages (from-to) | 20623-20628 |
| Number of pages | 6 |
| Journal | ACS Omega |
| Volume | 9 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2024 |
Subject classification (UKÄ)
- Condensed Matter Physics (including Material Physics, Nano Physics)
- Atom and Molecular Physics and Optics
- Nano-technology
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