Abstract

Metal-assisted chemical etching (MACE) is a cheap and scalable method that is commonly used to obtain silicon nano- or microwires but lacks spatial control. Herein, we present a synthesis method for producing vertical and highly periodic silicon microwires, using displacement Talbot lithography before wet etching with MACE. The functionalized periodic silicon microwires show 65% higher PEC performance and 2.3 mA/cm2 higher net photocurrent at 0 V compared to functionalized, randomly distributed microwires obtained by conventional MACE at the same potentials.

Original languageEnglish
Pages (from-to)20623-20628
Number of pages6
JournalACS Omega
Volume9
Issue number18
DOIs
Publication statusPublished - 2024

Subject classification (UKÄ)

  • Condensed Matter Physics (including Material Physics, Nano Physics)
  • Atom and Molecular Physics and Optics
  • Nano-technology

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