Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE

Gvidas Astromskas; Mattias Borg; Philippe Caroff; Lars-Erik Wernersson

doi:10.1109/ICIPRM.2008.4702990

Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE

Gvidas Astromskas, Mattias Borg, Philippe Caroff, Lars-Erik Wernersson

Solid State Physics

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

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Abstract

We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.

Original language	English
Title of host publication	20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	354-356
DOIs	https://doi.org/10.1109/ICIPRM.2008.4702990
Publication status	Published - 2008
Event	20th International Conference on Indium Phosphide and Related Materials - Versailles, France Duration: 2008 May 25 → 2008 May 29

Publication series

Name
ISSN (Print)	1092-8669

Conference

Conference	20th International Conference on Indium Phosphide and Related Materials
Country/Territory	France
City	Versailles
Period	2008/05/25 → 2008/05/29

Subject classification (UKÄ)

Condensed Matter Physics

Free keywords

tungsten
overgrowth
lateral growth
SAE
GaSb

Access to Document

10.1109/ICIPRM.2008.4702990

Temperature_dependence_of_GaSb_overgrowth_of_tungsten_on_GaSb__001__substrates_using_MOVPE

Cite this

Astromskas, G., Borg, M., Caroff, P., & Wernersson, L.-E. (2008). Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE. In 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008 (pp. 354-356). IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2008.4702990

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title = "Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE",

abstract = "We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.",

keywords = "tungsten, overgrowth, lateral growth, SAE, GaSb",

author = "Gvidas Astromskas and Mattias Borg and Philippe Caroff and Lars-Erik Wernersson",

year = "2008",

doi = "10.1109/ICIPRM.2008.4702990",

language = "English",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

pages = "354--356",

booktitle = "20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008",

address = "United States",

note = "20th International Conference on Indium Phosphide and Related Materials ; Conference date: 25-05-2008 Through 29-05-2008",

}

Astromskas, G, Borg, M, Caroff, P & Wernersson, L-E 2008, Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE. in 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 354-356, 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 2008/05/25. https://doi.org/10.1109/ICIPRM.2008.4702990

Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE. / Astromskas, Gvidas; Borg, Mattias; Caroff, Philippe et al.
20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. IEEE - Institute of Electrical and Electronics Engineers Inc., 2008. p. 354-356.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE

AU - Astromskas, Gvidas

AU - Borg, Mattias

AU - Caroff, Philippe

AU - Wernersson, Lars-Erik

PY - 2008

Y1 - 2008

N2 - We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.

AB - We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.

KW - tungsten

KW - overgrowth

KW - lateral growth

KW - SAE

KW - GaSb

U2 - 10.1109/ICIPRM.2008.4702990

DO - 10.1109/ICIPRM.2008.4702990

M3 - Paper in conference proceeding

SP - 354

EP - 356

BT - 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 20th International Conference on Indium Phosphide and Related Materials

Y2 - 25 May 2008 through 29 May 2008

ER -

Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE

Abstract

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Subject classification (UKÄ)

Free keywords

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