Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Henrik Nilsson, Philippe Caroff, Claes Thelander, Erik Lind, Olov Karlström, Lars-Erik Wernersson

Research output: Contribution to journalArticlepeer-review

Abstract

We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.
Original languageEnglish
JournalApplied Physics Letters
Volume96
Issue number15
DOIs
Publication statusPublished - 2010

Subject classification (UKÄ)

  • Condensed Matter Physics

Free keywords

  • field effect transistors
  • nanowires

Fingerprint

Dive into the research topics of 'Temperature dependent properties of InSb and InAs nanowire field-effect transistors'. Together they form a unique fingerprint.

Cite this