Abstract
We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2010 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- field effect transistors
- nanowires