TFET Circuit Configurations Operating below 60 mV/dec

Gautham Rangasamy; Zhongyunshen Zhu; Lars Ohlsson Fhager; Lars Erik Wernersson

doi:10.1109/TNANO.2024.3407360

TFET Circuit Configurations Operating below 60 mV/dec

Gautham Rangasamy, Zhongyunshen Zhu, Lars Ohlsson Fhager, Lars Erik Wernersson

NanoLund: Centre for Nanoscience

Research output: Contribution to journal › Article › peer-review

Abstract

Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.

Original language	English
Pages (from-to)	441-447
Number of pages	8
Journal	IEEE Transactions on Nanotechnology
Volume	23
Early online date	2024
DOIs	https://doi.org/10.1109/TNANO.2024.3407360
Publication status	Published - 2024

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

Current mirrors
III-V
IoT circuit configuration
Logic gates
low power
MOSFET
Nanowires
Quantum capacitance
sub-threshold analog
TFETs
Transistors
vertical nanowires

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10.1109/TNANO.2024.3407360

Cite this

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title = "TFET Circuit Configurations Operating below 60 mV/dec",

abstract = "Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.",

keywords = "Current mirrors, III-V, IoT circuit configuration, Logic gates, low power, MOSFET, Nanowires, Quantum capacitance, sub-threshold analog, TFETs, Transistors, vertical nanowires",

author = "Gautham Rangasamy and Zhongyunshen Zhu and Fhager, \{Lars Ohlsson\} and Wernersson, \{Lars Erik\}",

note = "Publisher Copyright: IEEE",

year = "2024",

doi = "10.1109/TNANO.2024.3407360",

language = "English",

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pages = "441--447",

journal = "IEEE Transactions on Nanotechnology",

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publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - TFET Circuit Configurations Operating below 60 mV/dec

AU - Rangasamy, Gautham

AU - Zhu, Zhongyunshen

AU - Fhager, Lars Ohlsson

AU - Wernersson, Lars Erik

N1 - Publisher Copyright: IEEE

PY - 2024

Y1 - 2024

N2 - Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.

AB - Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.

KW - Current mirrors

KW - III-V

KW - IoT circuit configuration

KW - Logic gates

KW - low power

KW - MOSFET

KW - Nanowires

KW - Quantum capacitance

KW - sub-threshold analog

KW - TFETs

KW - Transistors

KW - vertical nanowires

UR - https://www.scopus.com/pages/publications/85194882417

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DO - 10.1109/TNANO.2024.3407360

M3 - Article

AN - SCOPUS:85194882417

SN - 1536-125X

VL - 23

SP - 441

EP - 447

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

ER -

TFET Circuit Configurations Operating below 60 mV/dec

Abstract

Subject classification (UKÄ)

Free keywords

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Vertical III-V nanowire tunnel field-effect transistors: a circuit perspective

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