Abstract
The mechanisms involved in the maintenance of memory IgE responses are poorly understood, and the role played by germinal center (GC) IgE(+) cells in memory responses is particularly unclear. IgE(+) B cell differentiation is characterized by a transient GC phase, a bias toward the plasma cell (PC) fate, and dependence on sequential switching for the production of high-affinity IgE. We show here that IgE(+) GC B cells are unfit to undergo the conventional GC differentiation program due to impaired B cell receptor function and increased apoptosis. IgE(+) GC cells fail to populate the GC light zone and are unable to contribute to the memory and long-lived PC compartments. Furthermore, we demonstrate that direct and sequential switching are linked to distinct B cell differentiation fates: direct switching generates IgE(+) GC cells, whereas sequential switching gives rise to IgE(+) PCs. We propose a comprehensive model for the generation and memory of IgE responses.
Original language | English |
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Pages (from-to) | 2755-2771 |
Journal | Journal of Experimental Medicine |
Volume | 210 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2013 Nov 18 |
Externally published | Yes |
Subject classification (UKÄ)
- Cell and Molecular Biology
Keywords
- Animals
- Apoptosis
- B-Lymphocytes/cytology
- Cell Differentiation
- Germinal Center/cytology
- Green Fluorescent Proteins/genetics
- Immunoglobulin Class Switching
- Immunoglobulin E/metabolism
- Immunoglobulin G/metabolism
- Immunologic Memory
- Mice
- Mice, Inbred BALB C
- Mice, Transgenic
- Models, Immunological
- Nippostrongylus
- Plasma Cells/cytology
- Receptors, Antigen, B-Cell/metabolism
- Signal Transduction
- Strongylida Infections/immunology