Abstract
We present measurements of the potential profile of etched GaInAs/InP billiards and show that their energy gradients are an order of magnitude steeper than those of surface-gated GaAs/AlGaAs billiards. Previously observed in GaAs/AlGaAs billiards, fractal conductance fluctuations are predicted to be critically sensitive to the billiard profile. Here we show that, despite the increase in energy gradient, the fractal conductance fluctuations persist in the harder GaInAs/InP billiards. (C) 2004 Elsevier Ltd. All rights reserved.
Original language | English |
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Pages (from-to) | 179-184 |
Journal | Superlattices and Microstructures |
Volume | 34 |
Issue number | 3-6 |
DOIs | |
Publication status | Published - 2003 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- wall profile
- billiard
- 2DEG
- GaInAs/InP
- FCF