The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards

TP Martin, RP Taylor, H Linke, CA Marlow, GDR Hall, Ivan Shorubalko, Ivan Maximov, Werner Seifert, Lars Samuelson, TM Fromhold

Research output: Contribution to journalArticlepeer-review

Abstract

We present measurements of the potential profile of etched GaInAs/InP billiards and show that their energy gradients are an order of magnitude steeper than those of surface-gated GaAs/AlGaAs billiards. Previously observed in GaAs/AlGaAs billiards, fractal conductance fluctuations are predicted to be critically sensitive to the billiard profile. Here we show that, despite the increase in energy gradient, the fractal conductance fluctuations persist in the harder GaInAs/InP billiards. (C) 2004 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)179-184
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
Publication statusPublished - 2003

Subject classification (UKÄ)

  • Condensed Matter Physics

Free keywords

  • wall profile
  • billiard
  • 2DEG
  • GaInAs/InP
  • FCF

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