Abstract
We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 3353-3377 |
| Journal | International Journal of Modern Physics B |
| Volume | 19 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2005 |
Bibliographical note
The information about affiliations in this record was updated in December 2015.The record was previously connected to the following departments: Mathematical Physics (Faculty of Technology) (011040002), Department of Physics (011013000)
Subject classification (UKÄ)
- Physical Sciences
Free keywords
- distribution function
- electron transport
- quantum well
- Monte Carlo method
- SiGe
- scattering
- two-dimensional electron gas