The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

L. I. Murin, E. A. Tolkacheva, V. P. Markevich, A. R. Peaker, B. Hamilton, E. Monakhov, B. G. Svensson, Lennart Lindström, P. Santos, J. Coutinho, A. Carvalho

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40 Citations (SciVal)

Abstract

It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584138]
Original languageEnglish
Article number182101
JournalApplied Physics Letters
Volume98
Issue number18
DOIs
Publication statusPublished - 2011

Subject classification (UKÄ)

  • Condensed Matter Physics

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