The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

Xianshao Zou, Jianqi Dong, Kang Zhang, Weihua Lin, Meiyuan Guo, Wei Zhang, Xingfu Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.

Original languageEnglish
Article number106145
JournalNano Energy
Volume87
DOIs
Publication statusPublished - 2021 Sept 1

Subject classification (UKÄ)

  • Condensed Matter Physics

Free keywords

  • Carrier dynamics
  • Charge trapping
  • InGaN/GaN MQWs
  • Microwires
  • Piezotronic effect
  • Time-resolved spectroscopy

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