@inproceedings{67dcd67c822245868dd1a8e25e9634db,
title = "The ratio of interstitial to substitutional site occupation by Mn atoms in GaAs estimated by EXAFS",
abstract = "The location of Mn atoms in the MBE-grown layers of Ga1-xMnxAs is correlated with all important physical properties of the final material, therefore, it is the subject of many studies. It is known that in the as-grown MBE samples the Mn atoms occupy substitutional and interstitial positions but the proportion between these sites is not easy to find. A powerful tool for this kind of study is XAS as it probes the local atomic order and the electronic structure. The EXAFS data analysis was performed considering superposition of possible Mn locations. This allowed for determination of the distribution of Mn between those two lattice sites. (C) 2009 Elsevier Ltd. All rights reserved.",
keywords = "Semiconductors, Interstitial, Spintronics, Local order, X-ray absorption, Gallium arsenide, EXAFS, Manganese",
author = "K. Lawniczak-Jablonska and J. Libera and A. Wolska and Klepka, {M. T.} and R. Jakiela and Janusz Sadowski",
year = "2009",
doi = "10.1016/j.radphyschem.2009.03.089",
language = "English",
volume = "78",
publisher = "Elsevier",
pages = "S80--S85",
booktitle = "Radiation Physics and Chemistry",
address = "United States",
note = "9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9) ; Conference date: 15-06-2008 Through 20-06-2008",
}