Abstract
Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show that there is a certain probability of twin plane formation, which is independent of segment thickness. (c) 2006 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 635-639 |
Journal | Journal of Crystal Growth |
Volume | 298 |
DOIs | |
Publication status | Published - 2007 |
Bibliographical note
The information about affiliations in this record was updated in December 2015.The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
Subject classification (UKÄ)
- Condensed Matter Physics
- Chemical Sciences
Free keywords
- metalorganic vapor phase epitaxy
- nanomaterials
- crystal morphology
- planar defects