Abstract
The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 509-513 |
Journal | Physica B: Condensed Matter |
Volume | 340 |
DOIs | |
Publication status | Published - 2003 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- vacancy-dioxygen
- silicon
- defects
- LVMs