The VO2* defect in silicon

Lennart Lindström, LI Murin, BG Svensson, VP Markevich, T Hallberg

Research output: Contribution to journalArticlepeer-review

Abstract

The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)509-513
JournalPhysica B: Condensed Matter
Volume340
DOIs
Publication statusPublished - 2003

Subject classification (UKÄ)

  • Condensed Matter Physics

Free keywords

  • vacancy-dioxygen
  • silicon
  • defects
  • LVMs

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