Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn) As

Johan Adell, I. Ulfat, L. Ilver, Janusz Sadowski, K. Karlsson, J. Kanski

Research output: Contribution to journalArticlepeer-review


Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.
Original languageEnglish
JournalJournal of Physics: Condensed Matter
Issue number8
Publication statusPublished - 2011

Subject classification (UKÄ)

  • Physical Sciences
  • Natural Sciences


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