Abstract
Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.
Original language | English |
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Journal | Journal of Physics: Condensed Matter |
Volume | 23 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2011 |
Subject classification (UKÄ)
- Physical Sciences
- Natural Sciences