TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

P. G. Karlsson, J. H. Richter, Martin Andersson, M. K-J. Johansson, Jakob Blomquist, Per Uvdal, A. Sandell

Research output: Contribution to journalArticlepeer-review

15 Citations (SciVal)

Abstract

The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 x 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process. (C) 2011 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1147-1156
JournalSurface Science
Volume605
Issue number13-14
DOIs
Publication statusPublished - 2011

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Chemical Physics (S) (011001060)

Subject classification (UKÄ)

  • Atom and Molecular Physics and Optics

Keywords

  • Chemical vapor deposition
  • Synchrotron radiation photoelectron
  • spectroscopy
  • X-ray absorption spectroscopy
  • Scanning tunneling
  • microscopy
  • Growth
  • Titanium dioxide
  • Low index single crystal
  • surfaces
  • Crystalline-amorphous interfaces

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