@inproceedings{0a960eb8ac964bbc810b936697dd6013,
title = "Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence",
abstract = "We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.",
keywords = "nanowire, wrap-gate, photoluminescence, InP, ITO",
author = "Gustav Nylund and Kristian Storm and Henrik Torstensson and Jesper Wallentin and Magnus Borgstr{\"o}m and Dan Hessman and Lars Samuelson",
year = "2013",
doi = "10.1063/1.4848468",
language = "English",
volume = "1566",
publisher = "American Institute of Physics (AIP)",
pages = "427--428",
booktitle = "Physics of Semiconductors",
address = "United States",
note = "31st International Conference on the Physics of Semiconductors (ICPS) ; Conference date: 29-07-2012 Through 03-08-2012",
}