Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP

Martin Frimmer; Jie Sun; Ivan Maximov; Hongxing Xu

doi:10.1063/1.2993181

Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP

Martin Frimmer, Jie Sun, Ivan Maximov, Hongxing Xu

Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.

Original language	English
Article number	133110
Journal	Applied Physics Letters
Volume	93
Issue number	13
DOIs	https://doi.org/10.1063/1.2993181
Publication status	Published - 2008

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)

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10.1063/1.2993181

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title = "Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP",

abstract = "Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.",

author = "Martin Frimmer and Jie Sun and Ivan Maximov and Hongxing Xu",

year = "2008",

doi = "10.1063/1.2993181",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics (AIP)",

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T1 - Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP

AU - Frimmer, Martin

AU - Sun, Jie

AU - Maximov, Ivan

AU - Xu, Hongxing

PY - 2008

Y1 - 2008

N2 - Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.

AB - Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/53349151425

U2 - 10.1063/1.2993181

DO - 10.1063/1.2993181

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133110

ER -

Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP

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