Tunable double quantum dots in InAs nanowires defined by local gate electrodes

Carina Fasth, Andreas Fuhrer, Mikael Björk, Lars Samuelson

Research output: Contribution to journalArticlepeer-review

138 Citations (SciVal)

Abstract

We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.
Original languageEnglish
Pages (from-to)1487-1490
JournalNano Letters
Volume5
Issue number7
DOIs
Publication statusPublished - 2005

Subject classification (UKÄ)

  • Nano Technology

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