Tunable double quantum dots in InAs nanowires defined by local gate electrodes

Carina Fasth; Andreas Fuhrer; Mikael Björk; Lars Samuelson

doi:10.1021/nl050850i

Tunable double quantum dots in InAs nanowires defined by local gate electrodes

Carina Fasth, Andreas Fuhrer, Mikael Björk, Lars Samuelson

Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.

Original language	English
Pages (from-to)	1487-1490
Journal	Nano Letters
Volume	5
Issue number	7
DOIs	https://doi.org/10.1021/nl050850i
Publication status	Published - 2005

Subject classification (UKÄ)

Nano-technology

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10.1021/nl050850i

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title = "Tunable double quantum dots in InAs nanowires defined by local gate electrodes",

abstract = "We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.",

author = "Carina Fasth and Andreas Fuhrer and Mikael Bj{\"o}rk and Lars Samuelson",

year = "2005",

doi = "10.1021/nl050850i",

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journal = "Nano Letters",

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AU - Fasth, Carina

AU - Fuhrer, Andreas

AU - Björk, Mikael

AU - Samuelson, Lars

PY - 2005

Y1 - 2005

N2 - We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.

AB - We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.

U2 - 10.1021/nl050850i

DO - 10.1021/nl050850i

M3 - Article

SN - 1530-6992

VL - 5

SP - 1487

EP - 1490

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Tunable double quantum dots in InAs nanowires defined by local gate electrodes

Abstract

Subject classification (UKÄ)

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